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| TN2130 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 300V RDS(ON) (max) 25 VGS(th) (max) 2.4V Order Number / Package TO-236AB* TN2130K1 Die TN2130ND Product marking for SOT-23: N1T where = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Option Drain Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C Gate Source TO-236AB (SOT-23) top view Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN2130 Thermal Characteristics Package TO-236AB ID (continuous)* 85mA ID (pulsed) 200mA Power Dissipation @ TA = 25C 0.36W jc ja IDR* 85mA IDRM 200mA C/W 200 C/W 350 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 300 0.8 2.4 -5.5 100 10 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Typ Max Unit V V mV/C nA A A mA Conditions ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA ID = 1mA, VGS = VDS VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 10V, VDS = 25V VGS = 4.5V, ID = 120mA VGS = 4.5V, ID = 120mA VDS = 25V, ID = 100mA VGS = 0V, VDS = 25V, f = 1MHz ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 250 25 1.1 250 50 15 5 10 7 12 15 1.8 400 %/C m pF ns V ns Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD = 25V, ID = 120mA RGEN = 25 ISD = 120mA, VGS = 0V ISD = 120mA, VGS = 0V VDD RL OUTPUT D.U.T. TN2130 Typical Performance Curves Output Characteristics 1.0 0.5 VGS = 10V 0.8 VGS =10V 0.4 4V 6V Saturation Characteristics ID (amperes) 4V 0.4 ID (amperes) 0.6 8V 6V 0.3 3V 0.2 0.2 3V 0.1 2V 0 50 0 2 4 6 8 10 0 0 10 20 30 2V 40 VDS (volts) Transconductance vs. Drain Current 1.0 1.0 VDS (volts) Power Dissipation vs. Temperature VDS 0.8 0.8 VDS = 15V T A = -55C 25C GFS (siements) PD (watts) 0.6 0.6 0.4 0.4 SOT-23 0.2 125C 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TA (C) Thermal Response Characteristics SOT-23 (pulsed) SOT-23 (DC) Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 0.6 0.4 SOT-23 T A = 25C P D = 0.36W 0.01 0.2 T A = 25C 0.001 0 10 100 1000 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 3 TN2130 Typical Performance Curves BVDSS Variation with Temperature 1.1 50 On-Resistance vs. Drain Current 40 VGS = 4.5V BVDSS (normalized) RDS(ON) (ohms) 30 VGS = 10V 1.0 20 10 0.9 -50 0 50 100 150 0 0 0.2 0.4 0.6 0.8 1.0 Tj(C) Transfer Characteristics 1.0 ID (amperes) VTH and RDS Variation with Temperature 2.0 1.2 V = = 15V VDSDS15V 0.8 VGS(th) (normalized) 1.1 1.2 1.0 0.8 0.9 0.6 TA = -55C 0.4 125C 0.2 0.8 0 0 2 4 6 8 10 -50 0 50 VGS(th) @ 1mA 0.4 0 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 50 10 Tj(C) Gate Drive Dynamic Characteristics f = 1MHz 8 C (picofarads) VDS = 10V VGS (volts) CISS 25 6 80 pF 4 VDS = 40V COSS CRSS 0 0 10 20 30 40 2 28pF 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) 11/12/01 25C RDS(ON) @ 4.5V, 120mA 1.6 ID (amperes) |
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